Field-effect transistors based on cubic indium nitride.
Identifieur interne : 000180 ( Main/Exploration ); précédent : 000179; suivant : 000181Field-effect transistors based on cubic indium nitride.
Auteurs : RBID : pubmed:24492240Abstract
Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transistors. Indium nitride (InN) has attracted much attention for this purpose because of its high electron drift velocity under a high electric field. Thick InN films have been applied to the fabrication of field-effect transistors (FETs), but the performance of the thick InN transistors was discouraging, with no clear linear-saturation output characteristics and poor on/off current ratios. Here, we report the epitaxial deposition of ultrathin cubic InN on insulating oxide yttria-stabilized zirconia substrates and the first demonstration of ultrathin-InN-based FETs. The devices exhibit high on/off ratios and low off-current densities because of the high quality top and bottom interfaces between the ultrathin cubic InN and oxide insulators. This first demonstration of FETs using a ultrathin cubic indium nitride semiconductor will thus pave the way for the development of next-generation high-speed electronics.
DOI: 10.1038/srep03951
PubMed: 24492240
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Field-effect transistors based on cubic indium nitride.</title><author><name sortKey="Oseki, Masaaki" uniqKey="Oseki M">Masaaki Oseki</name><affiliation wicri:level="1"><nlm:affiliation>Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.</nlm:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505</wicri:regionArea></affiliation></author><author><name sortKey="Okubo, Kana" uniqKey="Okubo K">Kana Okubo</name><affiliation wicri:level="1"><nlm:affiliation>Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.</nlm:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505</wicri:regionArea></affiliation></author><author><name sortKey="Kobayashi, Atsushi" uniqKey="Kobayashi A">Atsushi Kobayashi</name><affiliation wicri:level="1"><nlm:affiliation>Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.</nlm:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505</wicri:regionArea></affiliation></author><author><name sortKey="Ohta, Jitsuo" uniqKey="Ohta J">Jitsuo Ohta</name><affiliation wicri:level="1"><nlm:affiliation>Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.</nlm:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505</wicri:regionArea></affiliation></author><author><name sortKey="Fujioka, Hiroshi" uniqKey="Fujioka H">Hiroshi Fujioka</name><affiliation wicri:level="1"><nlm:affiliation>1] Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan [2] CREST, Japan Science and Technology Agency, Tokyo 102-0075, Japan.</nlm:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>1] Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan [2] CREST, Japan Science and Technology Agency, Tokyo 102-0075</wicri:regionArea></affiliation></author></titleStmt><publicationStmt><date when="2014">2014</date><idno type="doi">10.1038/srep03951</idno><idno type="RBID">pubmed:24492240</idno><idno type="pmid">24492240</idno><idno type="wicri:Area/Main/Corpus">000183</idno><idno type="wicri:Area/Main/Curation">000183</idno><idno type="wicri:Area/Main/Exploration">000180</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transistors. Indium nitride (InN) has attracted much attention for this purpose because of its high electron drift velocity under a high electric field. Thick InN films have been applied to the fabrication of field-effect transistors (FETs), but the performance of the thick InN transistors was discouraging, with no clear linear-saturation output characteristics and poor on/off current ratios. Here, we report the epitaxial deposition of ultrathin cubic InN on insulating oxide yttria-stabilized zirconia substrates and the first demonstration of ultrathin-InN-based FETs. The devices exhibit high on/off ratios and low off-current densities because of the high quality top and bottom interfaces between the ultrathin cubic InN and oxide insulators. This first demonstration of FETs using a ultrathin cubic indium nitride semiconductor will thus pave the way for the development of next-generation high-speed electronics.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Process"><PMID Version="1">24492240</PMID><DateCreated><Year>2014</Year><Month>02</Month><Day>04</Day></DateCreated><Article PubModel="Electronic"><Journal><ISSN IssnType="Electronic">2045-2322</ISSN><JournalIssue CitedMedium="Internet"><Volume>4</Volume><PubDate><Year>2014</Year></PubDate></JournalIssue><Title>Scientific reports</Title><ISOAbbreviation>Sci Rep</ISOAbbreviation></Journal><ArticleTitle>Field-effect transistors based on cubic indium nitride.</ArticleTitle><Pagination><MedlinePgn>3951</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1038/srep03951</ELocationID><Abstract><AbstractText>Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transistors. Indium nitride (InN) has attracted much attention for this purpose because of its high electron drift velocity under a high electric field. Thick InN films have been applied to the fabrication of field-effect transistors (FETs), but the performance of the thick InN transistors was discouraging, with no clear linear-saturation output characteristics and poor on/off current ratios. Here, we report the epitaxial deposition of ultrathin cubic InN on insulating oxide yttria-stabilized zirconia substrates and the first demonstration of ultrathin-InN-based FETs. The devices exhibit high on/off ratios and low off-current densities because of the high quality top and bottom interfaces between the ultrathin cubic InN and oxide insulators. This first demonstration of FETs using a ultrathin cubic indium nitride semiconductor will thus pave the way for the development of next-generation high-speed electronics.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Oseki</LastName><ForeName>Masaaki</ForeName><Initials>M</Initials><Affiliation>Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.</Affiliation></Author><Author ValidYN="Y"><LastName>Okubo</LastName><ForeName>Kana</ForeName><Initials>K</Initials><Affiliation>Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.</Affiliation></Author><Author ValidYN="Y"><LastName>Kobayashi</LastName><ForeName>Atsushi</ForeName><Initials>A</Initials><Affiliation>Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.</Affiliation></Author><Author ValidYN="Y"><LastName>Ohta</LastName><ForeName>Jitsuo</ForeName><Initials>J</Initials><Affiliation>Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.</Affiliation></Author><Author ValidYN="Y"><LastName>Fujioka</LastName><ForeName>Hiroshi</ForeName><Initials>H</Initials><Affiliation>1] Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan [2] CREST, Japan Science and Technology Agency, Tokyo 102-0075, Japan.</Affiliation></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2014</Year><Month>02</Month><Day>04</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Sci Rep</MedlineTA><NlmUniqueID>101563288</NlmUniqueID><ISSNLinking>2045-2322</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset><OtherID Source="NLM">PMC3912472</OtherID></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2013</Year><Month>10</Month><Day>30</Day></PubMedPubDate><PubMedPubDate PubStatus="accepted"><Year>2014</Year><Month>1</Month><Day>16</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>2</Month><Day>5</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>2</Month><Day>5</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>2</Month><Day>5</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>epublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">srep03951</ArticleId><ArticleId IdType="doi">10.1038/srep03951</ArticleId><ArticleId IdType="pubmed">24492240</ArticleId><ArticleId IdType="pmc">PMC3912472</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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